GB/T 14847-2010 Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Standard Number: GB/T 14847-2010
Chinese:重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
English:Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Effective Date:2011-10-01
Regulatory Authority:National Standardization Administration of China
Issuing Regulatory Authority:General Administration of Quality Supervision, Inspection and Quarantine of the People’s Republic of China,National Standardization Administration of China

Adheres to international standards:N
PDF Downloadable:Y

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