GB/T 24580-2009 Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

Standard Number: GB/T 24580-2009
Chinese:重掺n型硅衬底中硼沾污的二次离子质谱检测方法
English:Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

Effective Date:2010-06-01
Regulatory Authority:National Standardization Administration of China
Issuing Regulatory Authority:General Administration of Quality Supervision, Inspection and Quarantine of the People’s Republic of China,National Standardization Administration of China

Adheres to international standards:Y
PDF Downloadable:N

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